型号:

UMG9NTR

RoHS:无铅 / 符合
制造商:Rohm Semiconductor描述:TRANS DUAL NPN 50V 50MA SOT-353
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 阵列﹐预偏压式
UMG9NTR PDF
产品目录绘图 UMAxNTR,UMG(x,xx)NTR,UMY1N
标准包装 1
系列 -
晶体管类型 2 个 NPN 预偏压式(双)
电流 - 集电极 (Ic)(最大) 100mA
电压 - 集电极发射极击穿(最大) 50V
电阻器 - 基极 (R1)(欧) 10k
电阻器 - 发射极 (R2)(欧) 10k
在某 Ic、Vce 时的最小直流电流增益 (hFE) 30 @ 5mA,5V
Ib、Ic条件下的Vce饱和度(最大) 300mV @ 500µA,10mA
电流 - 集电极截止(最大) 500nA
频率 - 转换 250MHz
功率 - 最大 150mW
安装类型 表面贴装
封装/外壳 6-TSSOP(5 引线),SC-88A,SOT-353
供应商设备封装 UMT5
包装 剪切带 (CT)
产品目录页面 1642 (CN2011-ZH PDF)
其它名称 UMG9NCT
相关参数
103-103K API Delevan Inc INDUCTOR RF CHIP 10UH 10% SMD
H4BXG-10106-G1-ND Hirose Electric Co Ltd JUMPER-H9991TR/A3047G/X 6"
103-822K API Delevan Inc INDUCTOR RF CHIP 8.2UH 10% SMD
H4BXG-10106-B1-ND Hirose Electric Co Ltd JUMPER-H9991TR/A3047B/X 6"
103-682K API Delevan Inc INDUCTOR RF CHIP 6.8UH 10% SMD
UMG9NTR Rohm Semiconductor TRANS DUAL NPN 50V 50MA SOT-353
103-562K API Delevan Inc INDUCTOR RF CHIP 5.6UH 10% SMD
H4BXG-10106-A1-ND Hirose Electric Co Ltd JUMPER-H9991TR/A3047A/X 6"
103-472K API Delevan Inc INDUCTOR RF CHIP 4.7UH 10% SMD
XN0A31100L Panasonic Electronic Components - Semiconductor Products TRANS ARRAY NPN/PNP W/RES MINI-5
103-392K API Delevan Inc INDUCTOR RF CHIP 3.9UH 10% SMD
XN0A31100L Panasonic Electronic Components - Semiconductor Products TRANS ARRAY NPN/PNP W/RES MINI-5
103-332K API Delevan Inc INDUCTOR RF CHIP 3.3UH 10% SMD
H3BXT-10106-Y6-ND Hirose Electric Co Ltd JUMPER-H1504TR/A3049Y/X 6"
103-272K API Delevan Inc INDUCTOR RF CHIP 2.7UH 10% SMD
H3BXT-10106-W6-ND Hirose Electric Co Ltd JUMPER-H1504TR/A3049W/X 6"
103-222K API Delevan Inc INDUCTOR RF CHIP 2.2UH 10% SMD
XN0A31100L Panasonic Electronic Components - Semiconductor Products TRANS ARRAY NPN/PNP W/RES MINI-5
103-182K API Delevan Inc INDUCTOR RF CHIP 1.8UH 10% SMD
XN0421L00L Panasonic Electronic Components - Semiconductor Products TRANS ARRAY NPN/NPN W/RES MINI-6